Abstract
15N2+ions were implanted into c-Si with an energy of 5 keV/atom and fluences ranging from 5×1016 to 2×1017 atoms/cm2 at RT to form ultrathin silicon-nitride layers (SiNx) with different N/Si ratios depending on the fluences (up to an overstoichiometric N/Si ratio of 1.65). The 15N depth distributions were analysed by the resonant nuclear reaction 15N(p, αγ)12C(Eres=429 keV). The implanted samples were processed by Electron Beam Rapid Thermal Annealing (EB-RTA) at 1150° C for 15 s (ramping up and down 5° C/s). The chemical structure of the 15N implantation into Si was investigated by EXAFS and NEXAFS. Channeling-RBS (4He+, E0=1.5 MeV) measurements were performed to observe the transition region (disordered-Si layer, d-Si) being underneath of the SiNx layer (typical values of layer thicknesses:SiNx 24 nm, d-Si 6 nm).
Published Version
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