Abstract

The temperature dependence of phonon dispersion, total and partial phonon DOS of SbSBr crystal have been determined in paraelectric phase at T = 30 K and in ferroelectric phase at T = 11 K using FP—LAPW method in the framework of DFT along with the GGA approximation. Temperature dependence of total and partial phonon DOS for Sb, S and Br atoms where used for calculation of the vibration free energy of the unit cell Fvib and contribution from Sb, S and Br atoms to the free energy Fi,μ along c(z) —axis in quasiharmonic approximation in paraelectric and ferroelectric phases in temperature range from 11 K to 294 K. For investigation of softening effect nature of phonons along c(z) —axis the mean-squared displacements of Sb, S and Br atoms in x -, y -, z - direction have been calculated in quasiharmonic approximation in ferroelectric and paraelectric phases.

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