Lattice disorder induced by nitrogen-ion implantation in single crystal MnZn ferrite

Abstract

Abstract Single crystal MnZn ferrite was implanted with nitrogen molecule ions (N + 2 ) at 100 keV to investigate the annealing behavior of the implantation-induced damage at temperatures of 400–900°C. The lattice disorder was investigated by Rutherford backscattering combined with ion channeling. The annealing behavior of the lattice disorder revealed that two kinds of lattice distortion exist in the implanted crystal; the distortion that exists at a depth greater than the projected range was recovered by annealing at 700°C, whereas the distortion at the shallower depth was not recovered completely by annealing at 900°C. A discussion on the nature of the two kinds of lattice distortion is presented.