Assessment of Subsurface Damage in Ultraprecision Machined Semiconductors

Abstract

The subsurface damaged layer in ultraprecisison machined single crystal Ge was examined by ion channeling. Single crystal Ge surfaces were prepared by chemo-mechanical polishing, mechanical polishing with 1/4 gm diamond abrasive, single point diamond turning and ultraprecision orthogonal flycutting. The extent of subsurface lattice disorder was compared to the crystal's orginal surface quality. Ion channeling is seen to be useful for quantitative measure of lattice disorder in finely finished surfaces.