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Abstract
The near surface lattice disorder created by polishing of II-VI semiconductors has been examined. Ion channeling was used to quantify the subsurface damage in single crystal (0001) oriented CdS and (100) oriented ZnSe. Surfaces prepared by both mechanical and chemo-mechanical polishing were examined. Both total amount of lattice disorder and damage depth were found to be significantly higher for ZnSe when compared to CdS. Investigation of the presence of damage beyond that identified by the backscattered surface peak for the mechanical polished ZnSe surfaces was made by study of the rate of dechanneling with depth below the surface.
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