Lattice Defects in Semiconducting Hg1 − xCdxTe Alloys: II . Defect Structure of Indium‐Doped

Abstract

Hall effect measurements were carried out on indium‐doped crystals quenched to room temperature subsequent to equilibration at 500° and 600°C under various partial pressures of Hg. All the indium‐doped crystals were n‐type under moderate to high partial pressures of Hg whereas they were p‐type at very low Hg pressures. The concentration of electrons obtained in the cooled crystals was lower than the intrinsic carrier concentration at the equilibration temperatures. Also the electron concentration was much lower than the indium concentration in the crystals and was found to increase with increasing Hg pressures at the equilibration temperatures and with increase in the total indium present in the crystals. These inferences have led to a defect model according to which most of the indium is incorporated as dissolved in with only a small fraction of indium acting as single donors occupying Hg lattice sites. Based on such a model, calculated electron concentrations in the cooled crystals as a function of indium concentration and partial pressure of Hg are in agreement with the experimentally observed values.