Abstract
A vertical-cavity surface-emitting laser was fabricated using a lateral p-n junction to inject carriers in the InGaAs active layer. The lateral p-n junction is formed in GaAs epilayers doped only with silicon and grown by molecular-beam epitaxy on a patterned GaAs (311) A-oriented substrate. This design allows the use of electrically insulating distributed Bragg reflectors and coplanar contacts while simplifying device process. Pulsed-mode operation at room temperature was obtained with a threshold current of 2.3 mA. Light emission spectrum has a single peak at 942 nm with a full width at half maximum of 0.15 nm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
