Abstract
A light-emitting diode array was fabricated using a lateral p–n junction to inject carriers in the InGaAs active layer. The lateral p–n junction is formed in GaAs epilayers doped only with silicon and grown by molecular beam epitaxy on a patterned GaAs (311)A-oriented substrate. This design allows the use of electrically insulating carrier-confining barriers and coplanar contacts while simplifying device process. Light emission is uniform all over the 1200dpi array and electroluminescence spectrum has a single peak at 960 nm.
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