Abstract
A new LIGBT structure based on partial isolation SOI technology is proposed and demonstrated through numerical simulations. In comparison with conventional SOI LIGBTs, the new structure offers an enhanced RESURF (REduced SURface Field) effect and improved heat dissipation with no compromise in the switching speed and on-state resistance.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have