Abstract
In this study, elements of a new technology for the treatment of optoelectronic materials—laser plasma–chemical treatment—are investigated considering the splitting of diamond and sapphire wafers into crystals as an example. Copper vapor lasers and an ultraviolet laser with wavelengths of 510.6, 578.2, and 355 nm, respectively, are used in the experiments. The working pressure in the reactor is 1×10−3−1×10−1torr.
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