Abstract
We calculate and experimentally detect the laser melting threshold in nanocrystalline Si/amorphous SiO2 superlattices. Using laser energy density slightly above the melting threshold, we observe two types of laser-induced structural modifications: (i) disappearance of nanocrystalline Si phase in the samples with thin (∼2nm) SiO2 layers and (ii) amorphization of Si nanocrystals in the samples with thicker (⩾5nm) SiO2 layers. The observed Si nanocrystal amorphization increases optical absorption and intensity of visible photoluminescence in nanocrystalline Si/amorphous SiO2 superlattices.
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