Abstract
A method for laser-induced local p-type activation of an as-grown Mg-doped GaN sample with a high lateral resolution is developed for realizing high power vertical devices for the first time. As-grown Mg-doped GaN is converted to p-type GaN in a confined local area. The transition from an insulating to a p-type area is realized to take place within about 1–2 μm fine resolution. The results show that the technique can be applied in fabricating the devices such as vertical field effect transistors, vertical bipolar transistors and vertical Schottkey diode so on with a current confinement region using a p-type carrier-blocking layer formed by this technique.
Highlights
Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices
High-power vertical GaN devices, such as vertical field effect transistors (FETs), vertical bipolar transistors, and vertical Schottkey diode so on are the main applications of GaN-related materials
The regrown crystal surface is exposed to air and contaminated by the lithography processes
Summary
Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices. A local carrier-blocking layer of p-GaN has been proposed.[4] Crystal regrowth[5] or ion implantation[6] into the n-type layer are commonly employed methods to achieve such a current-blocking layer.
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