Abstract
Two different methods of laser induced crystallization for preparing large grained polycrystalline silicon thin films on glass are reported. The first one is a lateral epitactic crystallization process following melting by an Ar+ laser. The second one is an explosive crystallization process. Both methods lead to crystal grains of several 10 μm in size. The films, 200 to 500 nm thick, may be used as a seed layer for an epitactic thickening process leading to solar cells.
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