Abstract
The Bi1.5ZnNb1.5O7 (BZN) thin films with cubic pyrochlore structure were prepared on Pt∕SiO2∕Si substrates by pulsed laser deposition from a stoichiometric target. The crystallinity, surface morphology, and dielectric properties of BZN thin films at different substrate temperatures were investigated. It was found that the BZN films had a pure cubic pyrochlore structure when deposited at 550–650°C and the strong (222) texture at 650°C. The cubic BZN thin films deposited at 600°C had a dielectric loss lower than 0.004 and maximum voltage tunability of 6% with an applied bias field of 0.5MV∕cm under 100kHz.
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