Abstract

The use of laser radiation to locally modify nucleation barriers to thin film growth is discussed. Examples are described in which UV laser photodeposition is used to directly pattern surface-altering monolayer or submonolayer films. The surface-altering films can then be used to promote or both physical condensation as well as surface chmistry. A qualitative is made of two kinds of processes: those relying on physical, and those relying on chemical, barriers. A figure of merit is defined and discussed, which measures the selectivity of a given process for patterned growth.

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