Abstract
N-polar (−c-plane) InGaN/GaN light-emitting diodes (LEDs) were grown by metalorganic vapor phase epitaxy, and their optoelectronic properties were evaluated by electroreflectance (ER) and electroluminescence (EL) measurements. In −c-plane LEDs, the emission energy was much lower than that in c-plane LEDs. By comparing EL and ER results, we found that the emission energy was also much lower than the transition energy. The transition energy is in good agreement with X-ray diffraction analysis results. These results indicate that −c-plane LEDs exhibit a larger Stokes-like shift than do c-plane LEDs. This Stokes-like shift is due to the strong potential fluctuation, which is possibly caused by the specific growth patterns of −c-plane III–nitrides. The dominant emission centers of the −c-plane LEDs were suggested to be the localized states of InGaN islands.
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