Comparative study of LEDs conformally overgrown on multi-facet GaN NWs vs. conventional c-plane LEDs

Abstract

Over the last decade, considerable efforts have gone into researching techniques to improve the efficiency of light emitting diodes (LEDs) based on the III-nitride material system. These efforts can be classified into two main approaches: improving the internal quantum efficiency (IQE) and increasing the light extraction efficiency of the LED devices. In the work outlined below, we demonstrate a unique LED structure that has a significantly enhanced light output intensity compared to c-plane LEDs by tackling both approaches simultaneously.