Abstract
This paper presents the results of an investigation of the steady-state safe operating conditions for large-signal silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) circuits. By calculating capacitive currents within the intrinsic transistor, avalanche inducing currents through the transistor junctions are isolated and then compared with dc instability points established through simulation and measurement. In addition, calibrated technology computer-aided design simulations are used to provide further insight into the differences between RF and dc operation and stress conditions. The ability to swing the terminals of a SiGe HBT beyond the static $I$ – $V$ conditions coincident with catastrophic breakdown is explained. Furthermore, hot-carrier effects are also compared from multiple perspectives, with supporting data taken from fully realized $X$ -band and $C$ -band cascode driver amplifiers. This analysis provides microwave circuit designers with the framework necessary to better understand the full-voltage-swing potential of a given SiGe HBT technology and the resultant hot carrier damage under RF operation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
