Large-signal modeling methodology for GaN HEMTs for RF switching-mode power amplifiers design

Abstract

A large-signal model for GaN HEMT transistor suitable for designing radio frequency power amplifiers (PAs) is presented along with its parameters extraction procedure. This model is relatively easy to construct and implement in CAD software since it requires only DC and S-parameter measurements. The modeling procedure was applied to a 4-W packaged GaN-on-Si HEMT, and the developed model is validated by comparing its small- and large-signal simulation to measured data. The model has been employed for designing a switching-mode inverse class-F PA. Very good agreement between the amplifier simulation and measurement shows the validity of the model. © 2010 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2011. © 2011 Wiley Periodicals, Inc.