Abstract
A large-signal model for GaN HEMT transistor suitable for designing switching-mode power amplifiers (SMPAs) is presented along with its parameters extraction procedure. This model is relatively easy to construct and implement in CAD software since it requires only DC and S-parameter measurements. The modeling procedure was applied to a 4-W packaged GaN-on-Si HEMT and the developed model is validated by comparing its small- and large-signal simulation to measured data. The model has been employed for designing a switching-mode inverse class-F power amplifier. Very good agreement between the amplifier simulation and measurement shows the validity of the model.
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