Abstract
We report on zero-field spin splitting of two-dimensional electron systems. Though absent in the unbiased InAs square asymmetric quantum well (SAQW), the Rashba splitting becomes pronounced by applying a positive back-gate voltage. In our SAQW, the Rashba parameter alpha increases with electron density and is tuned by a factor of about 2 using an additional front gate without charging the well. We argue that the band-edge profile provides the important contribution for spin-orbit interaction due to barrier penetration of the envelope wave function. This mechanism can provide the potential for high speed implementation in spintronics.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.