Observation of fractional quantum Hall effect in an InAs quantum well

Abstract

The two-dimensional electron system in an InAs quantum well has emerged as a prime candidate for hosting exotic quasiparticles with non-Abelian statistics such as Majorana fermions and parafermions. To attain its full promise, however, the electron system has to be clean enough to exhibit electron-electron interaction phenomena. Here, we report the observation of the fractional quantum Hall effect in a very low disorder InAs quantum well with a well width of 24 nm, containing a two-dimensional electron system with a density $n=7.8\ifmmode\times\else\texttimes\fi{}{10}^{11}\phantom{\rule{0.28em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$ and low-temperature mobility $1.8\ifmmode\times\else\texttimes\fi{}{10}^{6}\phantom{\rule{0.28em}{0ex}}{\mathrm{cm}}^{2}$/Vs. At a temperature of $\ensuremath{\simeq}\phantom{\rule{0.16em}{0ex}}35$ mK and $B\ensuremath{\simeq}24$ T, we observe a deep minimum in the longitudinal resistance, accompanied by a nearly quantized Hall plateau at a Landau level filling factor $\ensuremath{\nu}=4/3$.