Abstract
Thin films of Cu(In, Ga)Se2 were prepared by thermal crystallization in saturated Se vapors from a precursor which was evaporated from Cu(In, Ga)Se2 compound without substrate heating. These thin films had a single phase with chalcopyrite structure. By scanning electron microscopy, large grain growth in Cu(In, Ga)Se2 thin films crystallized in saturated Se vapors was observed in comparison with that in samples prepared without Se shots. Grain sizes of more than 1 µm were obtained with uniform distribution in Cu(In, Ga)Se2 thin films crystallized in saturated Se vapors. The Hall mobility was increased and a band gap of around 1.4 eV was obtained for Cu(In, Ga)Se2 thin films crystallized in saturated Se vapors. This value of band gap lies in the optimum range for solar energy conversion theoretically.
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