Abstract
Epitaxial Bi2FeMnO6 (BFMO) thin films were deposited on Nb-dopedSrTiO3(Nb:STO) substrates via pulsed laser deposition. The 100-nm-thick BFMO thin films had a relatively high tetragonality with a high c/a ratio of 1.04, confirmed by X-ray diffraction. The BFMO thin film had low leakage currents and good ferroelectric properties along with an enhanced remanent polarization of about 25.0 μC/cm2. The BFMO thin films had large ferroelectric domain structures compared to conventional ferroelectric thin films, such as PbTiO3 thin films, which is due to their high domain wall energy.
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