Abstract
We investigated ferroelectric properties of silver niobate (AgNbO3) thin film grown on Nb-doped SrTiO3 substrate by pulsed laser deposition. The AgNbO3 thin film exhibited room temperature ferroelectricity with a large remanent polarization of about 31μC/cm2 (2Pr~62μC/cm2) and fast switching behavior within 120ns. Triangular grains of AgNbO3 thin film were observed by atomic force microscopy (AFM). The piezoelectric force microscopy (PFM) study revealed that the AgNbO3 thin film had mosaic-like ferroelectric domain structure. In comparison with PbTiO3 thin films, domain size of the AgNbO3 thin films was smaller than that of PbTiO3 thin films. Based on Landau, Lifshitz, and Kittel (LLK) scaling law of the domain size versus film thickness curves, it is inferred that AgNbO3 thin films have slightly lower domain wall energy than that of PbTiO3 thin films.
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