Abstract
Epitaxial Bi2FeMnO6 (BFMO) thin films were deposited on Nb-dopedSrTiO3(Nb:STO) substrates via pulsed laser deposition. The 100-nm-thick BFMO thin films had a relatively high tetragonality with a high c/a ratio of 1.04, confirmed by X-ray diffraction. The BFMO thin film had low leakage currents and good ferroelectric properties along with an enhanced remanent polarization of about 25.0 μC/cm2. The BFMO thin films had large ferroelectric domain structures compared to conventional ferroelectric thin films, such as PbTiO3 thin films, which is due to their high domain wall energy.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of materials science. Materials in electronics
Paper Title
Journal
Date
