Abstract
Black Phosphorus (BP) is presently attracting immense research interest on the global level due to its high mobility and suitable band gap for potential application in optoelectronics and flexible devices. It was theoretically predicted that BP has a large direction-dependent electrical and magnetotransport anisotropy. Investigations on magnetotransport of BP may therefore provide a new platform for studying the nature of electron transport in layered materials. However, to the best of our knowledge, magnetotransport studies, especially the anisotropic magnetoresistance (MR) effect in layered BP, are rarely reported. Here, we report a large linear MR up to 510% at a magnetic field of 7 Tesla in single crystals of BP. Analysis of the temperature and angle dependence of MR revealed that the large linear MR in our sample originates from mobility fluctuations. Furthermore, we reveal that the large linear MR of layered BP in fact follows a three-dimensional behavior rather than a two-dimensional one. Our results have implications to both the fundamental understanding and magnetoresistive device applications of BP.
Highlights
In the present work, we report a large and anisotropic LMR effect up to 510% at a magnetic field of 7 T in single crystals of Black Phosphorus (BP) when the electronic current is applied within the cleaved ac-plane
Single crystals of BP that were prepared by using the high-pressure synthesis technique described in the Methods section
The X-ray diffraction (XRD) pattern and Raman spectrum of ground BP powders are consistent with the reported ones of bulk BP crystals[21,22], indicating the good quality of our prepared bulk BP
Summary
Zhipeng Hou[1], Bingchao Yang[2], Yue Wang[1], Bei Ding[1], Xiaoming Zhang[1], Yuan Yao[1], Enke Liu[1], Xuekui Xi1, Guangheng Wu1, Zhongming Zeng[3], Zhongyuan Liu2 & Wenhong Wang[1]. Black phosphorus (BP), an emerging layered two-dimensional (2D) semiconductor, is presently attracting immense research interest on the global level due to its high mobility and suitable band gap for potential applications in novel electronic and optoelectronic devices[1,2,3,4,5]. We report a large and anisotropic LMR effect up to 510% at a magnetic field of 7 T in single crystals of BP when the electronic current is applied within the cleaved ac-plane We further demonstrate that the LMR follows a three-dimensional (3D) behavior with a small mass anisotropy
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