Abstract
Langmuir-Blodgett films of cadmium stearate and a substituted diacetylene monomer have been successfully deposited onto the surfaces of the narrow band gap semiconductors InSb and (Hg-Cd)Te. Admittance data for the resulting metal/insulator/semiconductor diodes are presented. The capacitance versus voltage results display the accumulation, depletion and inversion regions typical of an ideal device. The conductance for both devices shows a distinct peak in the depletion region which is thought to be due to losses at interface states. The organic layers are also shown to be transparent to far-IR radiation, indicating that useful detection devices could be based on Langmuir-Blodgett film/narrow band gap semiconductor structures.
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