Abstract
High-speed Si bipolar transistor technology that uses lamp-heated Rapid Vapor-phase Doping (RVD) for shallow base formation is demonstrated. By applying RVD to a self-aligned metal/IDP (SMI) base electrode structure, excellent characteristics, 82-GHz f/sub T/ and 92-GHz f/sub max/, were obtained simultaneously. Devices with longer emitters attained 100 GHz f/sub T/ and f/sub max/.
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