L -electron effect in AlAs–GaAs–AlAs double-barrier structures

Abstract

This letter reports the theoretical study of the current–voltage characteristics of the AlAs–GaAs–AlAs double-barrier structure with a thin GaAs well and thin AlAs barriers at room temperature, within a third-neighbor sp3 bond-orbital model. We demonstrate that the tunneling current caused by the L-valley electrons gives a significant contribution to the valley current at room temperature. Moreover, if the AlAs barriers become thick enough (e.g., >3 nm), the tunneling current at room temperature may be dominated by the L electrons instead of Γ electrons.