Abstract
Photoluminescence (PL) spectra of Al0.21Ga0.79As/GaAs/Al0.21Ga0.79As double quantum wells (DQWs) separated by a thin AlAs barrier have been studied in the temperature range 77–300 K. The well width was varied from 65 to 175 A, and the thickness of the AlAs barrier was 5, 10, or 20 A. In the case of a sufficiently thin (5, 10 A) AlAs barrier, the energy spectrum of QW states is considerably modified by coupling between the QWs. This effect shifts the main spectral peak of PL, and specific features associated with the splitting of the ground state into symmetric and asymmetric states are observed in the spectra at higher temperatures. The DQW structure with a 20-A-thick AlAs barrier is a system of two uncoupled asymmetric Al0.21Ga0.79As/GaAs/AlAs QWs. The energy levels in double coupled QWs were calculated as functions of the well width and AlAs barrier thickness, and good correlation with the experimentally observed energies of optical transitions was obtained.
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