Abstract
The paper reports that the intensity of generation and the concentration of low-temperature thermal donors (LTD) at 450°C in silicon, where fast diffusing impurities (FDI) are stabilized by means of binding them into electrically neutral chemically bound complexes with sulfur, are significantly lower compared to their intensity and concentration in reference samples of silicon doped with sulfur and pure reference samples. The “Kaiser model” states that the initial rate of generation of low-temperature thermal donors is proportional to biquadrate, and their maximum concentration is to the third degree of oxygen concentration. According to the Kaiser model of thermal donor generation, LTD represent predominantly stable tetrahedrons (i.e. SiO<sub>4</sub> molecules). However, the Kaiser model does not take into account the possibility of interaction of oxygen with other impurities that might lead to the formation of electrically active centers. Based on the analysis of experimental results of Si<S> samples subjected to heat treatment the authors recommend a revision of the principles of LTD in silicon in view of behavior of FDI, as they play a key role in the process of the formation of LTD. Thus, in the present paper the authors effectively are attempting to shed light on the anticipated role of impurity centers with deep levels in the process of formation of thermal donors.
Highlights
It’s well known that the concentration of oxygen in the single-crystalline silicon grown by the Czochralski in dustrial technique, reaches up to ~ 1,5×1018cm-3 and that in most cases largely surpasses the concentration of the dopant impurities
During growth of silicon single crystals and manufacture of various semiconductor devices based on single crystalline silicon, when crystals are subjected to prolonged heat treatment in the temperature range of 350–500°C, the oxygen dissolved in the material rearranges, which is accompanied by the generation of lowtemperature thermal donors (LTD) [1,2,3,4,5,6]
In order to study the kinetics of thermal donor generation process, samples of Si subjected to heat treatment at a temperature of 880°C, as well as reference samples of Si as well as Si were subjected to long heat treatment at 450°C
Summary
It’s well known that the concentration of oxygen in the single-crystalline silicon grown by the Czochralski in dustrial technique, reaches up to ~ 1,5×1018cm-3 and that in most cases largely surpasses the concentration of the dopant impurities. The oxygen dissolved in silicon virtually does not affect the electrical conductivity of the material. During growth of silicon single crystals and manufacture of various semiconductor devices based on single crystalline silicon, when crystals are subjected to prolonged heat treatment in the temperature range of 350–500°C, the oxygen dissolved in the material rearranges, which is accompanied by the generation of lowtemperature thermal donors (LTD) [1,2,3,4,5,6]. In view of the fact that the initial rate of generation of LTD is proportional to biquadrate, and their maximum concentration is to the third degree of oxygen concentration, the authors in the study [7] had proposed the model of thermal donor generation kinetics widely known as “Kaiser model”. According to the Kaiser model of thermal donor generation, LTD represent predominantly stable tetrahedrons
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