Abstract

In this paper, the static friction coefficient of different particle sizes silicon wafers, glass particles and separation platform are measured by the plane method. Based on the force analysis of particle oscillatory separation process, the kinetic equation of particle oscillatory separation process is established, and the influence of factors such as particle size and friction coefficient on the motion trajectory of particle oscillatory separation process is analyzed. The research results indicate that the range of static friction coefficients between silicon wafers, glass particles, and separation platforms is different, but there are also overlapping parts. The kinetic equation indicates that the motion speed of particle oscillatory separation process is affected by factors such as the friction coefficient between particles and separation platforms, the inclination angle of separation platforms, and the amplitude of separation platforms. During the oscillatory separation process of silicon wafer glass mixed particles, silicon wafer particles with friction coefficients of 0.33–0.39 will become silicon wafer products, glass particles with friction coefficients of 0.22–0.31 will become glass products, and silicon wafer glass particles with overlapping friction coefficients of 0.310.33 will become intermediate products. To achieve better separation of silicon wafer and glass particles in the oscillatory separation process, it is necessary to take control measures to reduce the friction coefficient between the separation platform and silicon wafer and glass particles as much as possible.

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