Junction leakage characteristics in modified LOCOS isolation structures with a nitride spacer

Abstract

Junction leakage characteristics in modified local oxidation of silicon (LOCOS) isolation structures have been studied when a nitride spacer was used to prevent bird's beak encroachment. Junction leakages with very low activation energy and strong voltage dependence were observed in the nitride spacered LOCOS. Comparative studies on the junction leakages of nonrecessed and recessed LOCOS have revealed that an additional silicon recess process after nitride spacer formation reduces the junction leakage current.