Abstract
The negative-capacitance field-effect transistor(NC-FET) has attracted tremendous research efforts. However, the lack of a clear physical picture and design rule for this device has led to numerous invalid fabrications. In this work, we address this issue based on an unexpectedly concise and insightful analytical formulation of the minimum hysteresis-free subthreshold swing (SS), together with several important conclusions. Firstly, well-designed MOSFETs that have low trap density, low doping in the channel, and excellent electrostatic integrity, receive very limited benefit from NC in terms of achieving subthermionic SS. Secondly, quantum-capacitance is the limiting factor for NC-FETs to achieve hysteresis-free subthermionic SS, and FETs that can operate in the quantum-capacitance limit are desired platforms for NC-FET construction. Finally, a practical role of NC in FETs is to save the subthreshold and overdrive voltage losses. Our analysis and findings are intended to steer the NC-FET research in the right direction.
Highlights
Layer can be implemented with single-domain ferroelectric (FE) materials, which are featured by their “double-well” energy landscape versus polarization[29]
Our analysis reveals that well-designed scaled MOSFETs that have low trap density and low doping in the channel, and excellent electrostatic integrity by employing state-of-the-art FET structures, such as SOI-FET, FinFET, NWFET, CNT-FET, and 2D material based FETs etc., which have negligible parasitic capacitance compared to the gate capacitance, receive very limited benefit from NC in terms of achieving small subthreshold swing (SS) (< 60 mV per decade)
We derive an unexpectedly concise and insightful formula for the minimum SS for hysteresisfree operation, which allows us to uncover that the quantum capacitance is the limiting factor for NC-FETs to achieve hysteresis-free subthermionic SS, and only FETs that can operate in the quantum-capacitance limit are desired platforms for NC-FET construction
Summary
Layer can be implemented with single-domain (best case) ferroelectric (FE) materials, which are featured by their “double-well” energy landscape versus polarization[29] (see Supplementary Note 2 and Supplementary Fig. 2a).
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