Abstract
Irreversible and reversible changes induced by illumination and/or annealing of thin evaporatively deposited Ge–As–S films at normal incidence are studied. Attention is paid to the volume (thickness) changes and their correlation with the changes induced in the band gap of the ternary and binary chalcogenides. The revealed dependences are compared to that obtained for obliquely deposited chalcogenide films and substantial differences have been found.
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