Abstract
Irreversible and reversible changes induced by illumination and/or annealing of thin Ge–As–S films are studied. Attention is paid to the volume (thickness) changes and their correlation with changes in the bandgap. The revealed dependences are compared to that obtained for obliquely deposited As(Ge)–S films, and substantial differences are found.
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Schedule a callMore From: Journal of Materials Science: Materials in Electronics
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