Abstract
The effect of band gap illumination and annealing below the glass transition temperature on the thickness and the optical band gap of As-based (As 2Se 3, As 2S 3) and Ge-based (GeSe 2, GeS 2) obliquely deposited chalcogenide films has been studied. It is observed that in the case of arsenic (As)-based glasses, illumination increases the thickness (expansion) and the band gap decreases (darkening), while as for germanium (Ge)-based glasses, both thickness and band gap show an opposite behavior to that of As-based glasses. By annealing the samples, before and/or after illumination, the trends of the changes in thickness and band gap are reversed. A strong correlation between the changes in thickness and band gap has been established for the first time.
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