Abstract
In this paper, we explore the transitions of low-frequency noise characteristics in high-k metal-gate bulk CMOS transistors induced by Total Ionizing Dose (TID). Due to the strong bias dependence of the noise characteristics, differentiating between noise shifts caused by the effective biasing change and the contribution of the newly generated traps becomes extremely challenging. In order to better understand the effects of irradiation, transistor noise had to be characterized at several biasing points, both in linear and saturation regions, before and after exposure to 1 Grad (SiO2) of TID. Correlation between shifts in time and frequency domain is presented in this work, along with possible explanations for each variation that occurs. We present examples of irradiation-generated Random Telegraph Noise (RTN) defects as well as various TID effects on noise Power Spectral Density (PSD) curves with pre-existing RTN sources.
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