Abstract
This paper presents the ionizing radiation effects on current–voltage (I–V) characteristics of Au/TiO2/n-Si metal–insulator-semiconductor (MIS) structure. The TiO2 film as the dielectric interface layer of Au/n-Si was deposited using RF magnetron sputtering method. The MIS structure was exposed to gamma irradiation from 60Co source with the dose rate of 0.69 kGy/h, and it was irradiated in the range of 0–100 kGy. The electronic parameters such as barrier height (Φb0), ideality factor (n), series resistance (Rs), and interface state density (Nss) of the MIS structure were calculated from the measured I–V data. Experimental results showed that all calculated parameters change with the irradiation dose rate. To determine current conduction mechanisms of the MIS structure, the In (IF) vs In (V) and In (IR) vs V1/2 curves for all irradiation doses are plotted under both forward bias and reverse bias, respectively.
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