Abstract
This chapter discusses ionized hollow cathode magnetron (HCM) sputtering. The HCM is a new type of high-density plasma device developed for ionized physical vapor deposition (I-PVD). Unlike other I-PVD approaches in which post-ionization of sputtered or evaporated metal atoms by either radiofrequency (RF) or microwave-generated high-density plasma is necessary, the HCM uses only a single DC power supply to both sputter and ionize the target material. HCM is reliable, scaleable, versatile, and suitable for the deposition of a large variety of materials with minimal modification of the source. Its ability to operate in the nonpoisoned mode for reactive sputtering has been extremely valuable in the deposition of binary compound films. The characteristics of HCM deposited films can be dramatically different from those by conventional PVD.
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