Abstract
Ti-TiN deposited by hollow cathode magnetron (HCM) sputtering has been successfully integrated with the low pressure (LP) Al planarization process to replace collimated Ti as the wetting layer. The HCM Ti-TiN stack is an excellent Al wetting layer that is insensitive to contamination, provides a much wider process window, and reduces TiAl/sub x/ formation. It also promotes strongly oriented Al, which is superior to Al films on collimated Ti.
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