Ultrathin gate dielectric films for Si-based microelectronic devices

Abstract

This chapter discusses the application of ultrathin gate dielectric films for Si-based microelectronic devices. Emphasis is placed on the correlation of dielectric quality, physicochemical issues, and processing parameters. Basic requirements of ultrathin dielectric films to be used in microelectronic devices are given. The chapter discusses the film preparation methods followed by electrical and physicochemical methods of characterization of dielectric films. The significance and effects of the hydrogen presence in gate dielectrics are also presented in the chapter. Further, silicon oxide films thermally grown on single-crystalline silicon in dry oxygen are discussed in the chapter. Understanding and simulating modem-processing routes to the formation of gate dielectric films require an understanding of the atomic transport processes responsible for their growth. Atomic transport is the natural way to approach the growth of ultrathin films and is explored in the chapter.