Abstract
Ionized cluster beam (ICB) deposition has been used to form thin films of metals, insulators, semiconductors and organic materials which have unique characteristics when compared to films formed using other techniques. Atomic-scale observations of the early stage of metal film growth have shown the presence of islands at the very earliest stages of film deposition by ICB method. The introduction of a small number of clusters containing a large number of adatoms, can dramatically alter the nucleation and growth of thin films and produce films with very different characteristics. For the film formation by ICB, emphasis is given to the formation of high-quality, epitaxial metallic films. In addition, several applications of the films with respect to electronic and optical devices are discussed with emphasis on the special characteristics of the films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
