Abstract
This paper provides a selective overview of ion damaging and dynamic annealing processes in solids, with particular emphasis on silicon. It is shown that the regime in which the rate of damage production closely balances dynamic defect annealing during implantation is important since subtle changes in implantation parameters can cause major changes to the observed residual damage. Mechanisms for amorphization in this regime are interesting. The role of mobile point defects in controlling the observed damage is discussed.
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