Abstract
Multiplication noise measurements for p + n type (100) GaAs avalanche photodiodes with various n-layer dopings ranging from 6 × 10 15 to 9 × 10 16 cm −3 confirmed that the ionization coefficient of electrons α is about two times larger than that of holes β in the electric field range from 2.4 × 10 5 to 5.6 × 10 5 V/cm. When pure electrons were injected into the avalanche region, the multiplication noise power was proportional to the 2.7th power of the multiplication factor and the ionization coefficient ratio k = β α was constant, where k = 0.5 in the above electric field range. The result was consistent with the multiplication factor dependence on light wavelength. Using the constant ionization coefficient ratio k and the multiplication factor dependence on applied bias voltage, ionization coefficients α and β for electrons and holes were estimated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
