Abstract
The impact ionization coefficients for electrons and holes in (100) oriented Ga0.18In0.82As0.39P0.61 whose band gap is 1.11 eV have been obtained from photomultiplication measurements on a Cd diffused p+n abrupt junction having a donor concentration of 2.5×1016 cm−3. The electron-to-hole ionization coefficient ratio has been found to be about 1.1 in the electric field range 4.0×105–5.0×105 V/cm.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
