Abstract
The impact ionization coefficients for electrons and holes in (100) oriented Ga0.33In0.67As0.70P0.30 whose band gap is 0.92 eV have been obtained from photomultiplication measurements on a Zn diffused p+n abrupt junction having a donor concentration of 2×1016 cm−3. It has been shown that the ionization coefficient for electrons is larger than that for holes by a factor of 1.5 over the electric field range from 3.3×105 to 4.3×105 V/cm.
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