Ionic liquid gating control of planar Hall effect in Ni80Fe20/HfO2 heterostructures**Project supported by the National Natural Science Foundation of China (Grant Nos. 51671099 and 11974149), the Open Foundation Project of Jiangsu Key Laboratory of Thin Films (Grant No. KJS1745), the Program for Changjiang Scholars and Innovative Research Team in University, China (Grant No. IRT-16R35), and the Fundamental Research Funds for

Abstract

We report a tunable transverse magnetoresistance of the planar Hall effect (PHE), up to 48% in the Ni80Fe20/HfO2 heterostructures. This control is achieved by applying a gate voltage with an ionic liquid technique at ultra-low voltage, which exhibits a gate-dependent PHE. Moreover, in the range of 0-V to 1-V gate voltage, transverse magnetoresistance of PHE can be continuously regulated. Ferromagnetic resonance (FMR) also demonstrates the shift of the resonance field at low gate voltage. This provides a new method for the design of the electric field continuous control spintronics device with ultra-low energy consumption.