Abstract
Formation of PdSi has been obtained by implanting energetic Xe ions through a thin Pd (or Pd2Si) film on a Si substrate. The PdSi phase was found to form near the Pd2Si-Si interface from Rutherford backscattering measurements. Phase formation was confirmed by glancing-angle x-ray-diffraction analysis. Subsequent thermal annealing at 300–400 °C resulted in successive growth of the phase. A uniform PdSi layer was obtained at the final stage of the annealing and exhibited a sheet resistivity of 18 μΩ cm.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
